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| polyfet rf devices LX521 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" TM process features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 45.0 Watts Single Ended Package Style LX2 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 220 Watts Junction to Case Thermal Resistance o 0.75 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 20 V 22.0 A RF CHARACTERISTICS ( SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 10 50 TYP 45.0 WATTS OUTPUT ) MAX UNITS dB % 5:1 Relative TEST CONDITIONS Idq = 0.80 A, Vds = 12.5 V, F = Idq = 0.80 A, Vds = 12.5 V, F = 500 MHz 500 MHz VSWR Idq = 0.80 A, Vds = 12.5 V, F = 500 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback Capacitance Common Source Output Capacitance 1 5.1 0.20 39.00 150.0 7.5 100.0 MIN 36 1.0 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 0.25 mA, Vgs = 0V Vds = 12.5 V, Vgs = 0V Vds = 0V Vgs = 30V Ids = 0.30 A, Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 16.00 A Vgs = 20V, Vds = 10V Vds = 12.5 Vgs = 0V, F = 1 MHz Vds = 12.5 Vgs = 0V, F = 1 MHz Vds = 12.5 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 07/17/2003 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com LX521 POUT VS PIN GRAPH L X 521 Pout- P in F=500MH z , V D S =12.5V Idq=.6A 60 50 40 30 11.00 CAPACITANCE VS VOLTAGE L 5 C 1 D IE 1000 C A P A C IT A N C E Pout 10.00 Ciss 100 Coss 9.00 Gain 20 8.00 10 0 0 2 4 6 P IN IN W A T T S 8 10 10 Crss Efficiency @45W = 73% 7.00 1 0 5 10 15 20 V D S IN V O L T S 25 30 IV CURVE L5C 1 DIE 40 35 30 ID IN AMPS 25 20 15 10 5 0 0 2 vg=2v 4 6 8 10 12 14 VDS IN VOLTS Vg=6v vg=8v 16 18 20 vg=12v ID & GM VS VGS 100 L5C 1 D IE ID , G M v s V G lg Id 10 gM G VDS=10V 1 0 2 4 Vg=4v vg=10v V g s in V o lts 6 8 10 12 14 Zin Zout PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 .XXX +/-.005 inches POLYFET RF DEVICES REVISION 07/17/2003 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com |
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